| 摘要 |
PROBLEM TO BE SOLVED: To protect a wafer from particle contamination and a damage and achieve a high throughput and a high yield, by a method wherein a wafer is subjected to a treatment together with a wafer holding member in processes before and after a heat treatment process. SOLUTION: In order to perform the processes of a reaction furnace 1 and a chamber adjacent to it continuously, first, a wafer W is held on a boat 8 which is a wafer holding member. In a process before the process of the reaction furnace 1, the wafer W is subjected to a treatment while it is held on the boat 8 and, after the process is practiced, the boat 8 conveyed by a conveying belt 9 is made to stay directly under the reaction furnace 1. Then, the reaction furnace 1 is made to descend and the boat 8 placed on the belt 9 is housed in the reaction chamber 2 of the reaction furnace 1 as it is. After a film is formed by a heat treatment, the reaction furnace 1 is made to ascend to a waiting position to expose the boat 8. After the exposure, the conveying belt 9 is operated and the wafer W is conveyed into the adjacent chamber for a post-process while the wafer 8 is held by the boat 8 and subjected to a treatment. With this constitution, the wafer is protected from particle contamination and a damage. |
