| 摘要 |
PROBLEM TO BE SOLVED: To provide a gold alloy wire supplying improved junctional characteristic at second-side junction upon bonding at a low heating temperature of 150 deg.C, and especially improved peeling strength and vibration breakage performance, so as to improve an effect to prevent breakage even in a case where a semiconductor device using a copper alloy lead frame is exposed to a severe heat-cycle environment, and to obtain a stable loop shape upon bonding. SOLUTION: A gold alloy wire contains 1-50 wt. ppm indium (In), 1-50 wt. ppm tin (Sn), at least one of La, Ce, Eu and Yb of 1-50 wt. ppm, at least one of Ag, Pt, Pd, Rh, Ir, Os and Ru of 1-100 wt. ppm, and a residue of gold and indispensable impurity. Further, at least one of Ca, Ge and Be of 50 wt. ppm or less may be added to the alloy wire material. |
