Planar silicon head with structure protected against over current and voltage

摘要

The planar silicon head has a yoke (104) formed on a silicon substrate (102). The yoke has a gap for reading and writing data. A hole (122,124) formed in the silicon substrate contains a conducting layer. An inner connecting piece (130,132) is formed at one end of the hole. A raised section (126,128) formed at the other end of the hole is used to form an electrode containing a conducting polymer layer which has the property that it changes into an insulator when exposed to an overcurrent or overvoltage.