IGBT with latch-up prevention and short circuit strength

摘要

The insulated gate bipolar transistor includes, on a first layer first surface, formed a second semiconductor layer of second conductivity, while a first semiconductor region (106,108) of first conductivity is formed in a surface of the second layer. In a surface of the first region is formed a second semiconductor region (124) of second conductivity, while an insulating film (114) is located on the first face. The insulating film carries a control electrode (116), while a first main electrode (120) is formed on the second region by a continuous contact section (121). Between the first and second region is formed a third semiconductor region (110) of first conductivity covering almost the entire bottom of the second region. The second region contains three parts (124a,b,c), each of specified design.