发明名称 |
Heat treatment of Si single crystal |
摘要 |
The method of this invention for heat treatment of a Si single crystal grown by the Czochralski method at a speed of pull of not less than 0.8 mm/min., characterized by heat-treating at a temperature in the range of from 1,150 DEG C. to 1,280 DEG C. a wafer cut out of the Si single crystal thereby producing a Si wafer excellent in oxide film dielectric breakdown voltage characteristic due to elimination of crystal defects. Consequently, this invention ensures production of LSI in a high yield.
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申请公布号 |
US5834322(A) |
申请公布日期 |
1998.11.10 |
申请号 |
US19970916291 |
申请日期 |
1997.08.22 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
FUSEGAWA, IZUMI;YAMAGISHI, HIROTOSHI;FUJIMAKI, NOBUYOSHI;KARASAWA, YUKIO |
分类号 |
C30B33/02;C30B15/00;C30B29/06;C30B33/00;H01L21/322;(IPC1-7):H01L21/322 |
主分类号 |
C30B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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