| 摘要 |
PROBLEM TO BE SOLVED: To obtain the subject sintered compact capable of stably forming a ZnO-Ga2 O3 -based film with excellent characteristics without generations of any abnormal electric discharge, and to provide a method for producing the sintered compact at low cost including large-sized ones. SOLUTION: This sintered compact is such one that ZnO phase containing Ga in the form of solid solution is the main constitutional phase, and has the following properties: sintered density: >=5.2 g/cm<3> , volume resistivity: <=2×10<-2> Ω.cm uniformly in the direction of target depth, average crystal grain size: 2-10 μm, and maximum hole size: <=2 μm. This sintered compact is obtained by adding gallium oxide powder to zinc oxide powder followed by molding the resultant mixed powder and then sintering at normal pressures; in this case, the average particle sizes of the zinc oxide powder and gallium oxide powder are <=1 μm, respectively, the molding is conducted under a cold condition, the sintering is conducted at 1300-1550 deg.C while introducing oxygen gas, and then a reduction is carried out. |
