| 摘要 |
PROBLEM TO BE SOLVED: To enable carriers to be effectively injected into an active layer and to enable a nitride semiconductor laser to be restrained from operating in a high-order mode, to operate on a low operating voltage, and to be enhanced in low-noise characteristics by a method wherein a mesa-type current injection layer is provided above the active layer, and a current block is provided to the side of the mesa-type current injection layer to form a current constriction structure. SOLUTION: Two parallel grooves cut in the surface of a multilayer structure SL are filled up with insulator (polymide) or semiconductor material for the formation of a current block layer 111. A polyimide layer not only functions as a layer to stop and constrict a current but also is suitable for a light trapping region used for restraining a high-order mode. N-type Gax Iny Alz N (x+y+z=1, 0<=x, y, z<=1) can be used as the above semiconductor material, wherein a PN junction is formed to constrict a current. The current blocking layer 111 is formed on N-type In0.1 Ga0.9 , provided so as to reach near an active layer 105 in a P-type clad layer 106, and effectively restrains an injected current from diffusing in a lateral direction. |
