METHOD FOR DETECTING CONCENTRATION OF IMPURITY IN CRYSTAL, PRODUCTION OF SINGLE CRYSTAL AND DEVICE FOR PULLING SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To calculate the amt. of an impurity in a crystal. SOLUTION: A temp. sensor 42 is fitted to a furnace 11, the temp. of a part above a melt 24 housed in a crucible 12 is measured and the evaporative state of oxygen evaporated from the free surface 44 of the melt 24 is detected. The concn. of oxygen in the melt 24 is calculated from relation with the amt. of oxygen dissolved in the crucible 12 and the amt. of oxygen incorporated into a silicon single crystal 40 pulled from the melt 24 can be known.