| 摘要 |
PROBLEM TO BE SOLVED: To increase a contact area of a connection plug and a storage node of a capacitor. SOLUTION: An inter-layer insulation layer 9, which has contact holes 10a and 10b reaching one of impurity-diffused regions 2a and 2c of MOS transistors 20a and 20b formed on a principal surface of a semiconductor substrate 1, is formed on the principal surface of the semiconductor substrate 1. In the contact holes 10a and 10b, connection plugs 11a and 11b provided with protruding parts 11a1 and 11b1, which protrude above a top surface 9a of the inter-layer insulation layer 9, are formed. Storage nodes 12a and 12b are so formed as to cover the protruding parts 11a1 and 11b1. |
