发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To enhance the reliability of a memory without increasing a write time, an erase time and a consumption current by stopping a write operation and a erase operation in accordance with facts in which the output potential of a boosting circuit becomes low or it becomes high for a period equal to or longer than a prescribed period. SOLUTION: A control signal outputting circuit 18 outputs an activated control signal C to be activated when the detection signal D of the output of an output potential detecting circuit 17 is outputted for a period equal to or longer than a preliminarily set period to an internal control circuit 12. Then, the circuit 18 is consisting of a delay circuit and an AND gate and the control signal C becomes an H level only when the detection signal D has an H level period equal to or longer than a low potential detection time. As a result, the control signal C is not activated by a pulse shaped detection signal D whose time, is equal to or shorter than the low potential detection time being in an instantaneous potential reduction and it is not informed to the internal control circuit 12 that the output of a boosting circuit 13 is in a low potential state.</p>
申请公布号 JPH10293998(A) 申请公布日期 1998.11.04
申请号 JP19970102834 申请日期 1997.04.21
申请人 SHARP CORP 发明人 MORI YASUMICHI
分类号 G11C16/02;G11C16/06;(IPC1-7):G11C16/06 主分类号 G11C16/02
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