| 摘要 |
PROBLEM TO BE SOLVED: To form an i-type non-single-crystal silicon layer with improved electrical and optical characteristics by constituting the i-type semiconductor layer with the non-single-crystal semiconductor layer and making non-uniform the distribution of the average crystal particle diameter of the crystal particles of the i-type semiconductor layer. SOLUTION: A photovoltatic element consists of a substrate 101, an n-type semiconductor layer 102, an i-type semiconductor layer 103, a p-type semiconductor layer 104, a transparent electrode 105, and a current collector electrode 106. A group IV element and a group IV-alloy non-single crystal semiconductor material are used as the semiconductor material. The semiconductor layer is doped to p and n types by a valence electron control, thus forming a pin junction. A plurality of pin junction are laminated, thus constituting a stacked cell. The distribution of the particle diameter of crystal particles being present in the i-type semiconductor layer is not uniform in film thickness direction and/or in surface direction, thus improving light absorption in the i-type semiconductor layer and increasing a light generating current. Also, the surface level density is reduced and the recombination of the light generating carriers is suppressed. |
