发明名称 GATE UNIT FOR HARD DRIVEN GTO THYRISTOR
摘要 PROBLEM TO BE SOLVED: To provide a compact, inexpensive, and mechanically stable gate unit which can simultaneously maintain a low-impedance connection and an excellent shield. SOLUTION: In a gate unit 47 for hard driven GTO(gate-turn-off) thyristor 10, at least several electronic elements 37,..., 42 required for driving the thyristor 10 are arranged on a printed circuit board 34. In order to attain a low- inductance contact, the circuit board 34 surrounds the thyristor 10 on a surface which is parallel to the semiconductor substrate 17 of the thyristor 10 between the anode side and cathode side of the thyristor 10 and is directly connected to the cathode contact 14 and gate connection 22 of the thyristor 10. Simultaneously, an improved mechanically stable compact structure is obtained. The elements 37,..., 42 are closely arranged to the thyristor 10 around the thyristor 10 on the printed circuit board 34.
申请公布号 JPH10294406(A) 申请公布日期 1998.11.04
申请号 JP19980043560 申请日期 1998.02.25
申请人 ASEA BROWN BOVERI AG 发明人 GRUENING HORST;PICCIONI ENRICO
分类号 H01L29/74;H01L21/52;H01L23/051;H01L23/34;H01L23/36;H01L23/64;(IPC1-7):H01L23/34 主分类号 H01L29/74
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