P-TYPE GALLIUM NITRIDE COMPOUND SEMICONDUCTOR, MANUFACTURE THEREOF, AND BLUE LIGHT-EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To activate a p-type impurity that is added into a gallium nitride compound semiconductor more efficiently, by performing setting so that a larger fixed amount of inert gas than the specific amount of p-type impurity being added into gallium nitride compound semiconductor film can be electrically activated. SOLUTION: A GaN film including a p-type impurity is formed on a sapphire substrate. Then, an annealing treatment is performed to a substrate where the GaN film is formed. A substrate 30 is installed at the center of a crystal tube, and the inside of the crystal tube is substituted with N2 . While a constant amount of N2 that flows in parallel on a substrate surface is being supplied, a substrate temperature is increased and the temperature is maintained. After that, the temperature of a substrate is cooled to a room temperature. The ratio of an acceptor concentration to the Mg impurity concentration in a GaN film is increased by approximately 1%, thus obtaining a stable and high activation rate.