| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve a high-frequency characteristic even in the mounting of the semiconductor chip of an FET having a cavity right under a gate electrode by forming a recessed part in the lead of a lead frame, mounting the semiconductor chip so that the active region is opposite to the recessed part and hollowing the part on the active region. SOLUTION: A lead frame having a frame part and leads 1, 2, 3 is formed. A recessed part 3a is formed in the central part of the lead 3. A semiconductor chip 6 is positioned to the lead frame and mounted thereon so that a gate pad is located on the lead 1, a drain pad is located on the lead 2 and a source pad is located on the lead 3 and that an FET part is located on the recessed part 3a to braze the electrodes of the semiconductor chip 6 on the leads 1 to 3. When the lead frame on which the semiconductor chip 6 is mounted is sealed with a resin after cooled, air inside the recessed part 3 prevents a resin from entering the recessed part 3a, so that the increase of capacity due to the resin may be suppressed.</p> |
