发明名称 |
IC power amplifier for generating high voltage required to control CRT |
摘要 |
The amplifier (1) presents an input terminal (7) which receives a low voltage (Va) generated by an amplifying stage (5). An output terminal (8) delivers the high voltage generated by the amplifier. The amplifier comprises two MOS transistors (9,10), a current source (11) and a diode (12). The first transistor is connected to the amplifier output and a second reference voltage (VDD). The diode is connected between the gate and source of the second transistor.
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申请公布号 |
FR2762727(A1) |
申请公布日期 |
1998.10.30 |
申请号 |
FR19970005242 |
申请日期 |
1997.04.24 |
申请人 |
SGS THOMSON MICROELECTRONICS SA |
发明人 |
BAROU MICHEL |
分类号 |
H03F1/22;H03F3/30;(IPC1-7):H03F3/213 |
主分类号 |
H03F1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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