发明名称 IC power amplifier for generating high voltage required to control CRT
摘要 The amplifier (1) presents an input terminal (7) which receives a low voltage (Va) generated by an amplifying stage (5). An output terminal (8) delivers the high voltage generated by the amplifier. The amplifier comprises two MOS transistors (9,10), a current source (11) and a diode (12). The first transistor is connected to the amplifier output and a second reference voltage (VDD). The diode is connected between the gate and source of the second transistor.
申请公布号 FR2762727(A1) 申请公布日期 1998.10.30
申请号 FR19970005242 申请日期 1997.04.24
申请人 SGS THOMSON MICROELECTRONICS SA 发明人 BAROU MICHEL
分类号 H03F1/22;H03F3/30;(IPC1-7):H03F3/213 主分类号 H03F1/22
代理机构 代理人
主权项
地址