| 摘要 |
A current sensing circuit is provided for a current driving transistor to see whether or not excess current flows into an external load, a vertical transistor serves as the current driving transistor and a resistor for converting the amount of driving current to a potential drop, and a drain node connected to a power supply line, and a source node connected to the external load and a sensing node connected to a voltage comparator are provided on a major surface of a semiconductor substrate so as to supply various electric powers through a plurality of current driving transistors respectively accompanied with current sensing circuits and integrated on a single semiconductor chip to the external load.
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