PHOTOELECTRIC CONVERSION ELEMENT AND POWER GENERATION SYSTEM USING THE SAME

摘要

The present invention is directed to provide a photovoltaic element in which the open-circuit voltage and the carrier range of holes are improved by preventing the recombination of photoexcited carriers. The photovoltaic element composed of a p-type layer, an i-type layer of a lamination structure consisting of an i-type layer by RFPCVD on the p-type layer side and an i-type layer by microwave (.mu.W) PCVD on the n-type layer side, or an i-type layer by microwave (.mu.w) PCVD on the p-type layer side and an i-type layer by RFPCVD on the n-type layer side, characterized in that the i-type layer by .mu.WPCVD is one formed by a .mu.WPCVD in which a lower .mu.W energy and a higher RF energy than .mu.W energy to decompose source gas at 100% are simultaneously applied to a source gas containing Si and Ge at a pressure of 50mTorr or less, such that the minimum values of bandgap is biased toward the p-type layer side off the center of the i-type layer, and the i-type layer by RFPCVD is one formed 30nm thick or less by a RFPCVD using a source gas containing a silicon containing gas at a deposition rate of 2nm/sec or less.