| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-contaminating highly pure silicon carbide heat generator useful as a heater for various kinds of devices used in a semiconductor field hating contamination, etc., and to provide a method for producing the same. SOLUTION: This highly pure silicon carbide heat generator is obtained by forming a 60-200 μm-thick silicon carbide coating film by a CVD method on the surface of a matrix comprising porous silicon carbide having a Fe content of <=10 ppm and an electric specific resistance of <=1.5 Ωcm at room temperature. The method for producing the heat generator comprises molding the mixture slurry of silicon carbide powder having a particle diameter range of <=10 μm with water into a prescribed shape, holding the molded product in HCl gas heated at a temperature of 800-1300 deg.C for a prescribed time, sintering the molded product in a non-oxidative atmosphere at 1800-2000 deg.C, treating the sintered product with an acid to dissolve off impurities, and subsequently forming a 60-200 μm-thick silicon carbide coating film on the surface of the obtained porous silicon carbide having a Fe content of <=10 ppm and having an electric specific resistance of <=0.1 Ωcm at room temperature as a matrix by a CVD method. |
