A method for making an electrical connection between a trench storage capacitor and an access transistor in a DRAM cell. The electrical connection is formed through the selectively controlled outdiffusion of either N-type or P-type dopants present in the trench through a single crystalline semiconducting material which is grown by epitaxy (epi) from the trench sidewall. This epitaxially grown single crystalline layer acts as a barrier to excessive dopant outdiffusion which can occur in the processing of conventional DRAMs.
申请公布号
US5827765(A)
申请公布日期
1998.10.27
申请号
US19960605622
申请日期
1996.02.22
申请人
SIEMENS AKTIENGESELLSCHAFT;INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
STENGL, REINHARD;HAMMERL, ERWIN;HO, HERBERT L.;MANDELMAN, JACK A.;SRINIVASAN, RADHIKA;SHORT, ALVIN P.