| 摘要 |
PROBLEM TO BE SOLVED: To reduce resistance of an interconnection consisting of scan lines including gate electrodes and to prevent hillocks and pin holes from being generated in the interconnection in an active matrix type liquid crystal display apparatus having a thin film transistor. SOLUTION: An interconnection made of Al-Nd-Ti alloy thin film 22 is formed on a glass substrate 21. In this interconnection composition, when Nd content is set at 0.75 at.% and Ti content is set at 0.5 at%, the resistivity results in approximately 8μΩcm. Thus, even when a heat treatment is carried out at the temperature of 240-270 deg.C after formation of the interconnection, generation of hillocks and pin holes can be suppressed. |
