发明名称 |
Method of fabricating a CMOS structure having ESD protection |
摘要 |
A process is disclosed for fabricating a CMOS structure with ESD protection. The outside transistors are covered with a protective oxide layer which is so masked as to cover the areas of the respective source and drain regions adjoining the field-oxide regions and the gate regions. The protective oxide layer is then subjected to a heat treatment, after which a siliciding process is carried out. |
申请公布号 |
EP0734067(A3) |
申请公布日期 |
1998.10.21 |
申请号 |
EP19960103063 |
申请日期 |
1996.02.29 |
申请人 |
DEUTSCHE ITT INDUSTRIES GMBH |
发明人 |
WILMSMEYER,KLAUS, DR.RER.NAT.DIPL.-ING. |
分类号 |
H01L27/04;H01L21/316;H01L21/822;H01L21/8238;H01L27/092 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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