| 摘要 |
A method of forming a bismuth-containing material layer on a substrate, comprising bubbler delivery or liquid delivery vaporization of a bismuth amide source reagent to form a bismuth-containing source vapor, and deposition on the substrate of bismuth from the bismuth-containing source vapor, to form the bismuth-containing material layer on the substrate. The bismuth amide source reagent may include a bismuth amide compound of the formula BiL1xL2y(NR1R2)z wherein: z is an integer of from 1 to 3; x+y+z=3; each of L1 and L2 is independently selected from C1-C4 alkyl, C114 C4 alkoxide, beta -diketonate, cyclic amido, cyclic tris-alkoxoamine, and C6-C10 aryl; and each of R1 and R2 is independently selected from C1-C8 alkyl, C1-C8 alkoxy, C6-C8 cycloalkyl, C6-C10 aryl, C1-C4 carboxyl, and -SiR33 wherein each R3 is independently selected from H and C1-C4 alkyl. Bismuth-containing films of the invention may be utilized in the construction of spatial light modulator devices, as buffer layers for the fabrication of ferroelectric material devices, and in dielectric, ferroelectric and superconductor thin film applications. |
