| 摘要 |
This high-power semiconductor device comprises (a) a disk of refractory metal having flat faces at its opposite sides and (b) two wafers of a semiconductor material having a coefficient of expansion similar to that of the refractory metal, the wafers being alloyed to the faces of the refractory metal disk in substantially aligned relationship to each other to form an assembly of the wafer and the disk with alloyed joints between the wafers and the disk. The alloyed joints are formed at elevated temperatures, and the wafers are of such size and thickness that the tendency of the wafer at one side of the disk to cause bowing of the assembly upon cooling of the assembly following formation of the alloyed joints is counteracted by a substantially equal and opposite tendency of the wafer at the opposite side of the disk to produce a substantially equal and opposite amount of bowing of the assembly, thereby resulting in a substantially flat assembly of the wafers and the disk upon cooling of the assembly following formation of the alloyed joints. The refractory metal disk is of tungsten or molybdenum, has a diameter of at least 1+E,fra 1/2+EE inches, and has a thickness of at least 5 mils and of such thickness value that if the wafer at one side of the disk were omitted so that a single wafer disk was present, the single wafer assembly would be subject to substantial bowing when it cooled following formation of the alloyed joint between the disk and the remaining wafer. A method of making this device is also claimed. |
