发明名称 Method of manufacturing sililcon-type charge transporting materials
摘要 A method of manufacturing solvent-soluble charge transporting materials capable of imparting charge-tranporting properties to polysiloxane resins. These materials have the formula A-[R1SiR23-nQn]p where A is a tertiary amine and organic group derived from a compound having charge transporting properties with an ionization potential of 4.5-6.2 eV; R1 is an alkylene group of 1-18 carbon atoms; R2 is a monovalent hydrocarbon group or a monovalent halogen-substituted hydrocarbon group of 1-15 carbon atoms; Q is a hydrolyzable group such as-OR3 where R3 is an alkyl group of 1-6 carbon atoms; n and p are each 1-3. This silicon-type charge transporting material is characterized by aromatic groups, and alkoxysilyl groups bonded via hydrocarbon groups onto the aromatic rings.
申请公布号 US5824443(A) 申请公布日期 1998.10.20
申请号 US19960743265 申请日期 1996.11.04
申请人 DOW CORNING ASIA, LTD. 发明人 KUSHIBIKI, NOBUO;TAKEUCHI, KIKUKO
分类号 C07F7/18;C08G77/04;C08L83/04;G03G5/06;G03G5/07;(IPC1-7):G03G5/00;G03G5/14 主分类号 C07F7/18
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