发明名称 |
Method of manufacturing sililcon-type charge transporting materials |
摘要 |
A method of manufacturing solvent-soluble charge transporting materials capable of imparting charge-tranporting properties to polysiloxane resins. These materials have the formula A-[R1SiR23-nQn]p where A is a tertiary amine and organic group derived from a compound having charge transporting properties with an ionization potential of 4.5-6.2 eV; R1 is an alkylene group of 1-18 carbon atoms; R2 is a monovalent hydrocarbon group or a monovalent halogen-substituted hydrocarbon group of 1-15 carbon atoms; Q is a hydrolyzable group such as-OR3 where R3 is an alkyl group of 1-6 carbon atoms; n and p are each 1-3. This silicon-type charge transporting material is characterized by aromatic groups, and alkoxysilyl groups bonded via hydrocarbon groups onto the aromatic rings.
|
申请公布号 |
US5824443(A) |
申请公布日期 |
1998.10.20 |
申请号 |
US19960743265 |
申请日期 |
1996.11.04 |
申请人 |
DOW CORNING ASIA, LTD. |
发明人 |
KUSHIBIKI, NOBUO;TAKEUCHI, KIKUKO |
分类号 |
C07F7/18;C08G77/04;C08L83/04;G03G5/06;G03G5/07;(IPC1-7):G03G5/00;G03G5/14 |
主分类号 |
C07F7/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|