发明名称 |
Method of fabricating a heterobipolar transistor |
摘要 |
A method of fabricating an HBT using differential epitaxy. By using an emitter mask and an exside-inside spacer structure, a self-aligned fabrication of an emitter contact and a base contact is carried out. The emitter contact layer is made from amorphous silicon. Since the entire process sequence is very temperature-stable and can be carried out at lower implantation energies than conventional methods, HBT's having a high layer quality can be fabricated by the method of the invention which is suitable for mass production and with which high oscillation frequencies can be accomplished.
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申请公布号 |
US5821149(A) |
申请公布日期 |
1998.10.13 |
申请号 |
US19970815010 |
申请日期 |
1997.03.14 |
申请人 |
DAIMLER BENZ AG;TEMIC TELEFUNKEN |
发明人 |
SCHUEPPEN, ANDREAS;DIETRICH, HARRY;KOENIG, ULF |
分类号 |
H01L21/331;H01L29/737;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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