| 摘要 |
PROBLEM TO BE SOLVED: To prevent a leak current between both lines at the time of standby, to enable high density integration, and to improve a yield of products by setting a non-selection signal level of a bus-word line selection signal of a sub-word line driving circuit to the same potential and a non-selection level of a main word line. SOLUTION: A sub-word line driving circuit SWD is constituted of an inverter circuit consisting of MOSFET Q1, Q2 in which a sub-word line SWL is connected to an output terminal and Q3 turning on and off a sub-word selection signal FXB. When a main word line MWL is a high level of high voltage VVP corresponding to a selection level of a word line, Q2 is turned on and the SWL is made a low level. At the time, even if the FXB is made a selection level of a low level and an output signal of an inverter circuit N1 is made a selection level corresponding to VPP, the Q1 is in an off-state, the SWL is made a non- selection state by turning on the Q2 and made the same high level, thereby preventing a leak current. |
