发明名称 |
Simple BICMOS process for creation of low trigger voltage SCR and zener diode pad protection |
摘要 |
The present invention provides a semiconductor protection device in a substrate having a first type of conductivity. The semiconductor protection device includes two vertical bipolar transistors. A well region is located within the substrate having a second type of conductivity with a base region within the well region having a first type of conductivity. A first doped region having the second type of conductivity and a second doped region having a first type of conductivity are located within the well region. A third doped region having the second type of conductivity and a fourth doped region having the first type of conductivity are located within the base region. A doped region having a first type of conductivity is located within the substrate. This doped region is connected to the fourth doped region.
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申请公布号 |
US5821572(A) |
申请公布日期 |
1998.10.13 |
申请号 |
US19960768905 |
申请日期 |
1996.12.17 |
申请人 |
SYMBIOS, INC. |
发明人 |
WALKER, JOHN D.;RANDAZZO, TODD A.;MILLER, GAYLE W. |
分类号 |
H01L27/02;(IPC1-7):H01L29/74;H01L31/111 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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地址 |
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