Method and circuitry for usage of partially functional nonvolatile memory
摘要
A method and circuitry are described that permit one to utilize a partially functional integrated circuit memory. A memory array is segregated into separate blocks that can each be isolated to minimize the amount of the memory array rendered unusable by a defect. Circuitry is also provided to program memory cells within the array to one of at least three amounts of charge and thereby increase the amount of storage provided by the remaining functional blocks.
申请公布号
US5822256(A)
申请公布日期
1998.10.13
申请号
US19970811194
申请日期
1997.03.05
申请人
INTEL CORPORATION
发明人
BAUER, MARK E.;WELLS, STEVEN;BROWN, DAVID M.;JAVANIFARD, JOHNNY;SWEHA, SHERIF;HASBUN, ROBERT N.;GALLAGHER, GARY J.;RASHID, MAMUN;ROZMAN, RODNEY R.;HAWK, GLEN;BLANCHARD, GEORGE;WINSTON, MARK;PASHLEY, RICHARD D.