| 摘要 |
PROBLEM TO BE SOLVED: To perform accurate alignment between the through-hole of a semicon ductor storage device, which has a first memory cell and a second memory cell, and a capacitance electrode. SOLUTION: This device has a first semiconductor substrate 1 of first conductivity type 1, a first layer 2 of a second conductivity type which functions as an embedded plate electrode, the first capacitor insulating film 7 of the first memory cell, the second capacitor insulating film 7 of the second memory cell, and a polysilicon layer 8 of second conductivity type which functions as a storage node, which further has third layers 8 of second conductivity type which function as the storage nodes each in contact with the first and second capacitor insulating films. There is a level difference between the topside of the third layer 8 and the topside of the semiconductor substrate 1, and this level difference enables accurate alignment. |
