| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that emits light uniformly entirely where a current becomes uniform within the surface of a chip even in the semiconductor light-emitting element gallium nitride compound semiconductor with a relatively large electrical resistance of a semiconductor layer is used. SOLUTION: A semiconductor light-emitting element comprises a substrate 1, a semiconductor lamination part 10 where a GaN compound semiconductor is laminated for forming a light-emitting layer on the substrate, a first electrode (a p-side electrode 8) that is provided while being connected to a first-conductive- type semiconductor layer (a p-type layer 5) on the surface side of the semiconductor lamination part, and a second electrode (an n-side electrode 9) that is provided while being connected to a second-conductive-type electrode (an n-side layer 3) where one portion of a semiconductor lamination part 10 is eliminated by etching and is exposed. In this case, a second electrode is provided at a first corner part 13a that is one corner part of a light-emitting element chip 13 where a plane shape is in square shape, and the above first electrode is provided along the two sides being adjacent to the second corner part from a second corner part 13b that opposes the first corner part. |
