| 摘要 |
In an IGBT of the trench gate structure having a current sensing function, a plurality of trench gates are formed in each of a main current cell region and a current sensing cell region. Of these trench gates, the trench gates formed at end portions of the cell regions have no source regions on their opposing faces so as to prevent channels from being formed at least on the opposing faces. The interval between the opposing channel faces of the main current cell region and current sensing cell region is increased in order that the resistance of a parasitic resistor becomes considerably higher than that of an external resistor leaving an interval between first and second P-type base regions unchanged. The operation imbalance between the cell regions can be prevented by setting the carrier distribution in the current sensing cell region directly under the second base region substantially equal to that in the main current cell region. Thus, both the temperature characteristic and withstanding characteristic of the device can be achieved and the linearity of the main current and sensed current can be improved.
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