| 摘要 |
PROBLEM TO BE SOLVED: To improve a semiconductor device in switching speed by a method, wherein a first single crystal silicon layer is formed on a semiconductor substrate, and polycrystalline silicon layers which are sporadically laid into a prescribed pattern and a second single crystal silicon layer where the polycrystalline silicon layers are embedded are formed on the first single crystal silicon layer. SOLUTION: A first-single crystal silicon layer 2 is formed on a semiconductor substrate 3, and a second single-crystal silicon layer of multilayered structure where polycrystalline silicon regions 1 sporadically arranged in a prescribed pattern in a plan view from above the semiconductor substrate 3 are embedded is formed on the first single crystal silicon layer 2. That is, the polycrystalline silicon region 1 is formed 9μm in length a and 1μm in width b, a space c between the first and second polycrystalline regions 1 and another space c between the second and third polycrystalline regions 1 are set at 0.1 to 10μm or so. By this setup, a semiconductor device of this constitution can be enhanced in switching speed.
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