| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive and efficient optoelectric conversion device that can be manufactured easily. SOLUTION: In an optoelectric conversion device P, a metal layer 2, a crystal oxide layer 3, and a plurality of layers of silicon semiconductor layers 7 with a pn junction are sequentially laminated on one main surface of a substrate 1. At the same time, while the metal layer 2 and the silicon semiconductor layer 7 comes in contact with the crystal oxide layer 3, they are connected via a metal silicide layer N, thus obtaining output from the upper layer of the metal layer 2 and the silicon semiconductor layer 7. |
