| 摘要 |
PROBLEM TO BE SOLVED: To improve the light emitting efficiency without shortening the product life of the title light emitting element by a method wherein the composition of aluminum in a light emitting layer is specified meeting specific requirements while the composition of aluminum in the first clad layer is specified exceeding a specific value. SOLUTION: The first compound semiconductor layer 2 filling the role of a buffer layer is formed on a silicon substrate 1 and then the second compound semiconductor layer 3 for relieving the crystalline transposition caused by the different lattice constants between the silicon substrate 1 and the first compound semiconductor layer 2 is formed on the first compound semiconductor layer 2. Next, the first clad layer 4 is formed of P type aluminum-gallium-arsenic and the composition of the aluminum is specified to exceed 0.34. Furthermore, a light emitting layer 5 is formed of n-type aluminum-gallium-arsenic on the first clad layer 4 so as to specify the aluminum composition meeting a given requirements. |
