| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for electron beam lithography wherein a graphics can be lithographed more closely to an original polygon though the graphics is divided to lithograph. SOLUTION: In a lithography control unit 8, initially, a shot of electron beam is performed to a material to be lithographed on the basis of data of a pattern divided in the X direction stored in a data memory 6. Next, in the lithography control unit 8, a shot of electron beam is performed to a material to be lithographed on the basis of data of a pattern divided in the Y direction stored in a data memory 7. On respective lithography, dosage of electron beam shotted to the material to be lithographed is half of dosage enough for a photosensitive material coated on the material to undergo photoreaction. |
