| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device having a bipolar transistor of excellent current driving power and a complementary MOS transistor by a small number of manufacturing processes. SOLUTION: In this manufacturing method of a semiconductor device, an N-type embedding layer 2, a P-type embedding layer 3 and an epitaxial layer 4 are formed on the semiconductor substrate 1, a field oxide film 5, which defines an active region, is formed thereon, an N-type well region 6 and a P-type well region 7 are formed on the prescribed places, and a gate oxide film 9, which becomes a gate oxide film, is formed on the surface. Subsequently, an emitter contact hole 11 and a collector contact hole 12, reaching the above- mentioned epitaxial layer, are formed simultaneously, a polycrystalline silicon layer 13 is formed on the whole surface of the substrate, and subsequently, an emitter electrode 15, gate electrodes 16 and 17 of prescribed shape are formed by etching.
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