发明名称 READ AMPLIFIER CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To reduce the parasitic capacitance to be connected to each emitter and the noise caused by the base resistance of the transistors for a cascade connection by plurally dividing the cascade connected transistors and connecting a few transistors for a head bias to each emitter. SOLUTION: The collectors of five transistors are connected to the emitter of an upper stage cascade connection transistor Q1. The parasitic capacitance associated with the emitter of the transistor Q1 is 5×Cb and the parasitic capacitance associated with the emitters of lower stage cascade connection transistors Q11 to Q15 becomes 5×CA. Noises generated by the base resistances of the transistors Q1 and the transistors Q11 to Q15 are equal and set to Vn. If the sizes of the transistors Q11 to Q15 and head bias transistors Qb1 to Qb10 are the same and parasitic capacitances of the emitters are CA=Cb, the noise in the read amplifier is reduced to an approximately 1/2 value and the noise reduction effect is obtained at a higher frequency band.
申请公布号 JPH10269510(A) 申请公布日期 1998.10.09
申请号 JP19970076005 申请日期 1997.03.27
申请人 HITACHI LTD;HITACHI INF TECHNOL:KK;HITACHI COMMUN SYST INC;HITACHI VLSI ENG CORP 发明人 HIROSE TAKESHI;NAGAYA YUJI;HASHIMOTO TAKASHI;YOSHINAGA MAKI;HATANAKA NORIAKI;SOGA YUJI;MORIYA ATSUSHI;MOCHIZUKI TAKEO;KAMEYAMA SADAFUMI
分类号 G11B5/09;G11B5/02;H03F3/68;(IPC1-7):G11B5/09 主分类号 G11B5/09
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