| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which consumes less power, reduces a circuit area and can more stably write or erase data. SOLUTION: The semiconductor memory device has a booster circuit 1 for generating a high voltage to be applied to a memory cell to store data when data are written or erased, and a timer circuit 2 for controlling a time while the high voltage is applied to the memory cell. A puffer 4 is set between an oscillator 3 and the booster circuit 1, so that the booster circuit 1 and timer circuit 2 are driven by the common single oscillator 3.</p> |
