| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can realize the high activation rate of a dopant by suppressing the occurrence of atomic hydrogen, and a method for manufacturing the element. SOLUTION: In a semiconductor light emitting element, at least an n-type clad layer 3, an active layer 4, a p-type clad layer 5, and a cap layer 7 which is brought into contact with an electrode are laminated upon another on a compound semiconductor substrate. When the clad layer 5 is constituted in such a state that the dopant Zn forming the P-type conductivity of the layer 5 is inactivated when hydrogen exists, the cap layer 7 is formed by using an organic metal such as the TMAs (trimetyl arsenic), etc., which does not generate hydrogen in the process of reaction. |
