| 摘要 |
PROBLEM TO BE SOLVED: To provide an n-type impurity additive gas which is high in safety, and exhibits high effect of addition of an n-type impurity without permitting carbon to be taken in grown thin films. SOLUTION: In a method for growing group III-V compound semiconductors by a vapor-phase growth method, monomethylsilane (CH3 SiH3 ) is used as an n-type impurity material. By supplying hydrogen atoms and hydrogen atom radicals from the upper stream of a substrate, it is possible to use, as n-type impurity additive gases, Si-based organometal compounds having a large number of carbon atoms therein, such as tetramethylsilane ((CH3 )4 Si), tetraethylsilane ((C2 H5 )4 Si), tetra-normal-propylsilane ((n-C3 H7 )4 Si), tetra-normal-butylsilane ((n-C4 H9 )4 Si),and the like. |
