| 摘要 |
PROBLEM TO BE SOLVED: To provide a TFT(a thin-film transistor), in which electrical characteristics can be improved largely and efficiently as compared with the TFT having self-alignment structure by adopting optimum offset gate structure or LDD structure, and a liquid crystal display panel using the TFT. SOLUTION: The offset length Los (μm) of an offset region 7 and the film thickness tox (μm) of a gate insulating film 2 are constituted so as to satisfy formula 4.2tox-0.05<=Los<=-8.3tox+2.5 (where 0.06<=tox) in the TFT having offset gate structure. Accordingly, the wasteful reduction of an on current at the time of a change into an offset gate is prevented.
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