发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 <p>PROBLEM TO BE SOLVED: To prevent elements and the like formed in a semiconductor device from being observed by an optical method, by distributing and forming particle blocks bringing the difference of elevation for not less than a specified value on the surface of a semiconductor chip provided with an integrated circuit. SOLUTION: Protruding particle blocks 14 having the difference of elevation for not less than 2μm are arranged on a passivation film 13. The particle block 14 is formed by non-uniformly making the film grow by a CVD method, for example, and a growing temperature is set to be not more than 400 deg.C for avoiding the influence of thermal stress on the passivation film 13 and the constitution elements at the lower layers. When the particle block 14 larger than the wavelength of observation light is arranged on the passivation film 13, an optical path considerably bends owing to light refraction and reflection in the particle block 14 even if the particle block 14 has light transsmissivity. Thus, the observation of structure under the passivation film 13 becomes difficult. Thus, inner wiring structure is prevented from being optically observed from the upper part of the semiconductor device.</p>
申请公布号 JPH10270587(A) 申请公布日期 1998.10.09
申请号 JP19970071593 申请日期 1997.03.25
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 BAN KOJI;IKEDA KOICHI;TANNO MASAAKI;TAKEDA TADAO
分类号 H01L23/29;H01L23/00;H01L23/06;H01L23/31;(IPC1-7):H01L23/06 主分类号 H01L23/29
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