| 摘要 |
PROBLEM TO BE SOLVED: To enhance light picking-up efficiency by efficiently passing current to a light-emitting portion, and by preventing light absorption, oxidation of current diffusion layers, and diffusion of p-type dopants. SOLUTION: An n-type clad layer 2, an active layer 3 and a p-type clad layer 4 are, respectively, provided one after another on an n-type GaAs substrate 1 with a current inhibition layer 6 arranged at the top center thereof. The layer 6 is provided thereon with a p-type current diffusion layer 7 made of a compound semiconductor which contains no Al or has an Al content of more than 0 and less than 0.3, and has a bandgap larger than the active layer 3. A p-type electrode 11 is further provided on the layer 7 in face-to-face relation with the current inhibition layer 6. |
