| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the coverage of a gate insulating film and to simplify the manufacturing process by tapering the sidewall of a gate wiring at a gentle angle in a specific range and providing a gate insulating film formed without using anode oxidizing process. SOLUTION: On a metal film 2a, the gate wire 2 is formed in a gentle slope shape by dry etching so that the angle of its sidewall is 10 to 30 deg.. Namely, this gate wire 2 is tapered having no steep etched part on its sidewall, so an acutely angled part of the gate wire 2 need not be reduced by an anode oxidizing process unlike a conventional manufacturing method for a TFT substrate. Therefore, no anode-oxidized film is provided on the gate wire 2, so the step of the surface of the gate insulating film 5 can be made small. Further, the gate insulating film 5 only needs to be formed as a single layer by CVD, etc., right above the gate wire 2 after the patterning of the gate wire 2. Therefore, thus, the coverage of the gate insulating film 5 is improved to simplify the manufacturing process.</p> |
