Multilayer interlevel dielectrics using phosphorus-doped glass

摘要

A method for forming a planarized interlevel dielectric layer without degradation due to microloading effect is described. A first conformal layer of silicon dioxide is deposited overlying a conducting layer over an insulating layer on a semiconductor substrate. A second silicon dioxide layer is deposited overlying the first conformal silicon dioxide layer. A doped glass layer is deposited overlying the second silicon dioxide layer. The doped glass layer is coated with a spin-on-glass layer. The spin-on-glass layer is etched back until the interlevel dielectric layer is planarized. The microloading effects from the etching back of the spin-on-glass layer of the interlevel dielectric layer are lower than microloading effects in a conventional interlevel dielectric layer.