| 摘要 |
PCT No. PCT/JP95/01595 Sec. 371 Date Jun. 11, 1996 Sec. 102(e) Date Jun. 11, 1996 PCT Filed Aug. 7, 1995 PCT Pub. No. WO96/15298 PCT Pub. Date May 23, 1996The present invention relates to a method for forming crystal substrates on which can be easily formed spherical crystals which have superior crystal structure and little defect in shape. The present invention also relates to a method for making crystal substrates on which can be easily formed spherical crystals which have little defect in shape and from which impurities have been removed. Projections are formed integrally from a semiconductor crystal base, and flow regulating film is formed to cover the entire outer surface of the crystal base and a base portion of the projections. A heating beam is applied to the tips of the projections, and the end portions of the projections are melted. The surface tension of the melt and the melt regulation by the flow regulating film act to solidify the melt in a spherical shape, thus forming a spherical crystal.
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