| 摘要 |
PURPOSE:To eliminate a deviation in layout density by a plurality of active region lines arranged and deviated by 1/3 pitch in X-axis direction, by forming each bit line contact co-owned by two transistors in two regions perpendicular to a plurality of word lines and by connecting them through capacitors on diagonal lines. CONSTITUTION:Two rows of active regions arranged in X-axis direction at a predetermined intervals on a semiconductor substrate is deviated by 1/3 interval respectively and a plurality of lines are also arranged in Y-axis direction. Also, two transistors are formed at two portions perpendicular to the word line 1. In addition, a bit line contact 6 commonly possessed by two transistors is formed. Also, a transistor formed on one side of active region 2 is connected to a transistor arranged the closest to the Y-axis direction above the transistors via capacitor 3 erected on a diagonal line from X-axis to Y-axis. |
