| 摘要 |
PURPOSE:To obtain higher light-emission efficiency by a method wherein a fourth semiconductor layer formed with atom-layer epitaxial growth method is inserted between a first semiconductor lamination body and a semi--insulation semiconductor layer. CONSTITUTION:Between a semiconductor lamination body 2 and a semi- insulation semiconductor layer 11, a semiconductor layer 10 is inserted being formed with the atom-layer epitaxial growth method where impurities that provides a conduction type consisting of InP is not introduced intentionally or, even if introduced, impurities that provides p-type is introduced only with low density. Even if an electrode layer 13 passes over the semiconductor layer 10 to extend to the surface of the semi-insulation semiconductor layer 11, it is possible to narrowly feed current to the mesa section 3 of the semiconductor lamination body 2 so that the light-emission within the mesa 3 can be effectively obtained. |
