| 摘要 |
The invention provides a process for the preparation of hydrogen fluoride having a very low arsenic level. More specifically, the invention provides a process in which industrial grade anhydrous hydrogen fluoride, or an intermediate product obtained during the hydrogen fluoride manufacturing process, is contacted with an oxidizer in order to oxidize the arsenic impurity to produce anhydrous hydrogen fluoride with a level of arsenic impurity that is at least less than two parts per billion, or aqueous hydrogen fluoride with a correspondingly low level of arsenic.
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