Method of filling a contact hole in a semiconductor substrate with a metal

摘要

A method for forming a metal layer of an ultra-thin film according to metal deposition conditions and a method for forming metal wiring by filling a high aspect-ratio contact hole using cooling step prior to depositing the metal layer. In particular, the additional cooling process is performed before the process of depositing the metal layer and then the deposition process is performed in a state where the temperature of the wafer has been cooled down to a temperature in the range between -25 DEG C. and room temperature. The surface morphology of the deposited metal layer is improved and a continuous ultra-thin film can be obtained. Also, the aluminum filling characteristics in the contact hole having a high aspect-ratio are improved.